MOSFET N-CH 200V 9A DPAK FQD12N20LTM_SN00173
The pictures are for reference only
Model:
FQD12N20LTM_SN00173
Description:
MOSFET N-CH 200V 9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD12N20LTM_SN00173(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67709,Price reference "real-time change" China/Hongkong。 FQD12N20LTM_SN00173 package/specs, Download FQD12N20LTM_SN00173、Datasheet。