MOSFET N-CH 30V 9A/54A DPAK-3 NVD4810NT4G-TB01
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Description:
MOSFET N-CH 30V 9A/54A DPAK-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD4810NT4G-TB01(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56534,Price reference "real-time change" China/Hongkong。 NVD4810NT4G-TB01 package/specs, Download NVD4810NT4G-TB01、Datasheet。