MOSFET P-CH 100V 33.5A D2PAK FQB34P10TM-F085P
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Description:
MOSFET P-CH 100V 33.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB34P10TM-F085P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory43465,Price reference "real-time change" China/Hongkong。 FQB34P10TM-F085P package/specs, Download FQB34P10TM-F085P、Datasheet。