MOSFET P-CH 500V 2.1A DPAK FQD3P50TM-F085
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Description:
MOSFET P-CH 500V 2.1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, QFET®
DataSheet
FQD3P50TM-F085(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2904,Price reference "real-time change" China/Hongkong。 FQD3P50TM-F085 package/specs, Download FQD3P50TM-F085、Datasheet。