MOSFET N-CH 30V 10.3A 6PQFN NTLJS3D9N03CTAG
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Description:
MOSFET N-CH 30V 10.3A 6PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTLJS3D9N03CTAG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96785,Price reference "real-time change" China/Hongkong。 NTLJS3D9N03CTAG package/specs, Download NTLJS3D9N03CTAG、Datasheet。