MOSFET N-CH 100V 23A DPAK NVD6415ANLT4G-VF01
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Description:
MOSFET N-CH 100V 23A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD6415ANLT4G-VF01(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58513,Price reference "real-time change" China/Hongkong。 NVD6415ANLT4G-VF01 package/specs, Download NVD6415ANLT4G-VF01、Datasheet。