MOSFET N-CH 40V 33A DPAK SVD5806NT4G
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Description:
MOSFET N-CH 40V 33A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SVD5806NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory88450,Price reference "real-time change" China/Hongkong。 SVD5806NT4G package/specs, Download SVD5806NT4G、Datasheet。