MOSFET P-CHANNEL 60V 38A ATPAK NVATS5A113PLZT4G
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Description:
MOSFET P-CHANNEL 60V 38A ATPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVATS5A113PLZT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94430,Price reference "real-time change" China/Hongkong。 NVATS5A113PLZT4G package/specs, Download NVATS5A113PLZT4G、Datasheet。