FET 60V 1.0 MOHM SSOT3 FDN5630-B8
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Description:
FET 60V 1.0 MOHM SSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN5630-B8(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39296,Price reference "real-time change" China/Hongkong。 FDN5630-B8 package/specs, Download FDN5630-B8、Datasheet。