MOSFET N-CH 60V SUPERSOT6 FDC638P-P
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Description:
MOSFET N-CH 60V SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC638P-P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84790,Price reference "real-time change" China/Hongkong。 FDC638P-P package/specs, Download FDC638P-P、Datasheet。