P-CHANNEL MOSFET FOR ULTRA-HIGH MCH3312-TL-E
The pictures are for reference only
Description:
P-CHANNEL MOSFET FOR ULTRA-HIGH
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
MCH3312-TL-E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41815,Price reference "real-time change" China/Hongkong。 MCH3312-TL-E package/specs, Download MCH3312-TL-E、Datasheet。