BUK9880-55A,115 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

NXP

Model:

BUK9880-55A,115

Description:

MOSFET N-CH 55V 7A SOT223

Stock:

9504

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

7A(Tc)

Drain source voltage (Vdss)

55 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

11 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

584 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

73 mΩ @ 8A,10V

Power dissipation (maximum)

8W(Tc)

Vgs (max)

±15V

Vgs (th) (maximum) for different Ids

2V @ 1mA

packing

TR,CT

series

Automotive, AEC-Q101, TrenchMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SC-73

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载BUK9880-55A,115.pdf

BUK9880-55A,115（MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9504,Price reference "real-time change" China/Hongkong。 BUK9880-55A,115 package/specs, Download BUK9880-55A,115、Datasheet。