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MOSFET N-CH 55V 19.7A TO220AB BUK7575-55,127

BUK7575-55,127 image
The pictures are for reference only
Brand:
Model:
BUK7575-55,127
Description:
MOSFET N-CH 55V 19.7A TO220AB
Stock:
82857
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    19.7A(Tc)
  • Drain source voltage (Vdss)
    55 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    500 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    75 mΩ @ 10A,10V
  • Power dissipation (maximum)
    61W(Tc)
  • Vgs (max)
    ±16V
  • Vgs (th) (maximum) for different Ids
    4V @ 1mA
  • packing
    pipe
  • series
    TrenchMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    TO-220AB
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    BUK7575-55,127(MOSFET)ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82857,Price reference "real-time change" China/Hongkong。 BUK7575-55,127 package/specs, Download BUK7575-55,127、Datasheet。
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