BUK7575-55,127 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

NXP

Model:

BUK7575-55,127

Description:

MOSFET N-CH 55V 19.7A TO220AB

Stock:

82857

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

19.7A(Tc)

Drain source voltage (Vdss)

55 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

500 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

75 mΩ @ 10A,10V

Power dissipation (maximum)

61W(Tc)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

4V @ 1mA

packing

pipe

series

TrenchMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-220AB

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

BUK7575-55,127（MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82857,Price reference "real-time change" China/Hongkong。 BUK7575-55,127 package/specs, Download BUK7575-55,127、Datasheet。