MOSFET N-CH 30V 68.9A DPAK PHD63NQ03LT,118
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Description:
MOSFET N-CH 30V 68.9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
PHD63NQ03LT,118(MOSFET)ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34819,Price reference "real-time change" China/Hongkong。 PHD63NQ03LT,118 package/specs, Download PHD63NQ03LT,118、Datasheet。