MOSFET N-CH 100V 18A DPAK PHD18NQ10T,118
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Description:
MOSFET N-CH 100V 18A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
PHD18NQ10T,118(MOSFET)ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56284,Price reference "real-time change" China/Hongkong。 PHD18NQ10T,118 package/specs, Download PHD18NQ10T,118、Datasheet。