MOSFET N-CH 30V 120A I2PAK BUK9E1R6-30E,127
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Description:
MOSFET N-CH 30V 120A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BUK9E1R6-30E,127(MOSFET)ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97758,Price reference "real-time change" China/Hongkong。 BUK9E1R6-30E,127 package/specs, Download BUK9E1R6-30E,127、Datasheet。