BUK9C3R8-80EJ parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

NXP

Model:

BUK9C3R8-80EJ

Description:

MOSFET N-CH 80V D2PAK-7

Stock:

23095

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

80 V

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power dissipation (maximum)

Vgs (max)

Vgs (th) (maximum) for different Ids

packing

series

technology

MOSFET(Metal oxide)

working temperature

Encapsulation/Housing

D2PAK-7

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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BUK9C3R8-80EJ（MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23095,Price reference "real-time change" China/Hongkong。 BUK9C3R8-80EJ package/specs, Download BUK9C3R8-80EJ、Datasheet。