DMP58D0LFB-7 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMP58D0LFB-7

Description:

MOSFET P-CH 50V 180MA 3DFN

Stock:

62923

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Parameters

Current at 25 ° C - continuous drain (Id)

180mA(Ta)

Drain source voltage (Vdss)

50 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

27 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

8 Ω @ 100mA,5V

Power dissipation (maximum)

470mW(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.1V @ 250µA

packing

TR,CT

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

X1-DFN1006-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMP58D0LFB-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62923,Price reference "real-time change" China/Hongkong。 DMP58D0LFB-7 package/specs, Download DMP58D0LFB-7、Datasheet。