MOSFET N-CH 40V 110A PWRDI5060-8 DMNH4006SPSQ-13
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Description:
MOSFET N-CH 40V 110A PWRDI5060-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMNH4006SPSQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15090,Price reference "real-time change" China/Hongkong。 DMNH4006SPSQ-13 package/specs, Download DMNH4006SPSQ-13、Datasheet。