MOSFET P-CH 60V 8SOIC DMP6110SSS-13
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Description:
MOSFET P-CH 60V 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMP6110SSS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93197,Price reference "real-time change" China/Hongkong。 DMP6110SSS-13 package/specs, Download DMP6110SSS-13、Datasheet。