MOSFET N-CH 100V 12A TO252-3 DMN10H170SK3-13
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Description:
MOSFET N-CH 100V 12A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN10H170SK3-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50719,Price reference "real-time change" China/Hongkong。 DMN10H170SK3-13 package/specs, Download DMN10H170SK3-13、Datasheet。