MOSFET N-CH 60V 10.8A 8SO T&R 2 DMT6009LSS-13
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Description:
MOSFET N-CH 60V 10.8A 8SO T&R 2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT6009LSS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17609,Price reference "real-time change" China/Hongkong。 DMT6009LSS-13 package/specs, Download DMT6009LSS-13、Datasheet。