MOSFET N-CH 100V 4A 6UDFN DMT10H072LFDFQ-7
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Description:
MOSFET N-CH 100V 4A 6UDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT10H072LFDFQ-7(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68273,Price reference "real-time change" China/Hongkong。 DMT10H072LFDFQ-7 package/specs, Download DMT10H072LFDFQ-7、Datasheet。