MOSFET N-CH 100V 4.2A TO252-3 ZXMN10A25KTC
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Description:
MOSFET N-CH 100V 4.2A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ZXMN10A25KTC(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60786,Price reference "real-time change" China/Hongkong。 ZXMN10A25KTC package/specs, Download ZXMN10A25KTC、Datasheet。