MOSFET BVDSS: 61V~100V,POWERDI10 DMTH10H2M5STLWQ-13
The pictures are for reference only
Description:
MOSFET BVDSS: 61V~100V,POWERDI10
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH10H2M5STLWQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90753,Price reference "real-time change" China/Hongkong。 DMTH10H2M5STLWQ-13 package/specs, Download DMTH10H2M5STLWQ-13、Datasheet。