DMN53D0LQ-13 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMN53D0LQ-13

Description:

MOSFET N-CH 50V 500MA SOT23

Stock:

50229

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.01

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Parameters

Current at 25 ° C - continuous drain (Id)

500mA(Ta)

Drain source voltage (Vdss)

50 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

0.6 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

46 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

1.6 Ω @ 500mA,10V

Power dissipation (maximum)

370mW(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMN53D0LQ-13（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50229,Price reference "real-time change" China/Hongkong。 DMN53D0LQ-13 package/specs, Download DMN53D0LQ-13、Datasheet。