MOSFET N-CH 600V 80MA SOT23-3 DMN60H080DS-13
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Description:
MOSFET N-CH 600V 80MA SOT23-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN60H080DS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30608,Price reference "real-time change" China/Hongkong。 DMN60H080DS-13 package/specs, Download DMN60H080DS-13、Datasheet。