MOSFET N-CH 12V 10.7A TSOT26 DMN1019UVT-13
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Description:
MOSFET N-CH 12V 10.7A TSOT26
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN1019UVT-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97450,Price reference "real-time change" China/Hongkong。 DMN1019UVT-13 package/specs, Download DMN1019UVT-13、Datasheet。