DMT10H052LFDF-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMT10H052LFDF-7

Description:

MOSFET BVDSS: 61V~100V U-DFN2020

Stock:

21943

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.04

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power dissipation (maximum)

Vgs (max)

Vgs (th) (maximum) for different Ids

packing

series

technology

working temperature

Encapsulation/Housing

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

On sale

DataSheet

DMT10H052LFDF-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21943,Price reference "real-time change" China/Hongkong。 DMT10H052LFDF-7 package/specs, Download DMT10H052LFDF-7、Datasheet。