MOSFET N-CH 30V 10.6A/30A PWRDI DMT3009UFVW-13
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Description:
MOSFET N-CH 30V 10.6A/30A PWRDI
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
PowerDI3333-8(SWP)UX class
Surface mount,Wettable wings
DataSheet
DMT3009UFVW-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89543,Price reference "real-time change" China/Hongkong。 DMT3009UFVW-13 package/specs, Download DMT3009UFVW-13、Datasheet。