MOSFET BVDSS: 61V~100V SO-8 T&R DMT10H032LSS-13
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Description:
MOSFET BVDSS: 61V~100V SO-8 T&R
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT10H032LSS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30055,Price reference "real-time change" China/Hongkong。 DMT10H032LSS-13 package/specs, Download DMT10H032LSS-13、Datasheet。