DMP45H4D9HK3-13 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMP45H4D9HK3-13

Description:

MOSFET P-CH 450V 4.7A TO252

Stock:

60168

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

4.7A(Tc)

Drain source voltage (Vdss)

450 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

13.7 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

564 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

4.9 Ω @ 1.05A,10V

Power dissipation (maximum)

104W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-252,(D-Pak)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMP45H4D9HK3-13（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60168,Price reference "real-time change" China/Hongkong。 DMP45H4D9HK3-13 package/specs, Download DMP45H4D9HK3-13、Datasheet。