MOSFET N-CH 100V PWRDI5060 DMTH10H009SPS-13
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Description:
MOSFET N-CH 100V PWRDI5060
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH10H009SPS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64414,Price reference "real-time change" China/Hongkong。 DMTH10H009SPS-13 package/specs, Download DMTH10H009SPS-13、Datasheet。