MOSFET N-CH 60V 17.2A/100A PWRDI DMTH6006LPSWQ-13
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Description:
MOSFET N-CH 60V 17.2A/100A PWRDI
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
70 @ 10mA,5V / 50 @ 10mA,5V
Vgs (th) (maximum) for different Ids
Accelerometer,3 Axis,Impact
DataSheet
DMTH6006LPSWQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76478,Price reference "real-time change" China/Hongkong。 DMTH6006LPSWQ-13 package/specs, Download DMTH6006LPSWQ-13、Datasheet。