MOSFET BVDSS: 61V~100V POWERDI50 DMTH10H009SPSQ-13
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Description:
MOSFET BVDSS: 61V~100V POWERDI50
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH10H009SPSQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1343,Price reference "real-time change" China/Hongkong。 DMTH10H009SPSQ-13 package/specs, Download DMTH10H009SPSQ-13、Datasheet。