MOSFET BVDSS: 41V~60V POWERDI506 DMTH61M8SPS-13
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Description:
MOSFET BVDSS: 41V~60V POWERDI506
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH61M8SPS-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85350,Price reference "real-time change" China/Hongkong。 DMTH61M8SPS-13 package/specs, Download DMTH61M8SPS-13、Datasheet。