MOSFET BVDSS: 31V~40V POWERDI808 DMTH4M70SPGWQ-13
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Description:
MOSFET BVDSS: 31V~40V POWERDI808
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH4M70SPGWQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64244,Price reference "real-time change" China/Hongkong。 DMTH4M70SPGWQ-13 package/specs, Download DMTH4M70SPGWQ-13、Datasheet。