MOSFET N-CH 200V 180MA E-LINE ZVNL120ASTOA
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Description:
MOSFET N-CH 200V 180MA E-LINE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ZVNL120ASTOA(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2282,Price reference "real-time change" China/Hongkong。 ZVNL120ASTOA package/specs, Download ZVNL120ASTOA、Datasheet。