MOSFET P-CH 30V 2.9A/4A SOT223 ZXM62P03GTA
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Description:
MOSFET P-CH 30V 2.9A/4A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ZXM62P03GTA(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32852,Price reference "real-time change" China/Hongkong。 ZXM62P03GTA package/specs, Download ZXM62P03GTA、Datasheet。