MOSFET N-CH 60V 3.1A SOT223 ZXMN6A11GTC
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Description:
MOSFET N-CH 60V 3.1A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ZXMN6A11GTC(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72293,Price reference "real-time change" China/Hongkong。 ZXMN6A11GTC package/specs, Download ZXMN6A11GTC、Datasheet。