MOSFET N-CH 650V 2.8A TO251 DMG3N60SJ3
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Description:
MOSFET N-CH 650V 2.8A TO251
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMG3N60SJ3(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36646,Price reference "real-time change" China/Hongkong。 DMG3N60SJ3 package/specs, Download DMG3N60SJ3、Datasheet。