MOSFET N-CH 650V 9A TO220AB DMG9N65CT
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Description:
MOSFET N-CH 650V 9A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMG9N65CT(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53594,Price reference "real-time change" China/Hongkong。 DMG9N65CT package/specs, Download DMG9N65CT、Datasheet。