DMP1018UCB9-7 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMP1018UCB9-7

Description:

MOSFET P-CH 12V 7.6A U-WLB1515-9

Stock:

11536

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

7.6A(Ta)

Drain source voltage (Vdss)

12 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,4.5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

4.9 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

457 pF @ 6 V

On resistance (maximum) for different Ids and Vgs

18 mΩ @ 2A,4.5V

Power dissipation (maximum)

1W(Ta)

Vgs (max)

-6V

Vgs (th) (maximum) for different Ids

1.3V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

U-WLB1515-9

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

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DMP1018UCB9-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11536,Price reference "real-time change" China/Hongkong。 DMP1018UCB9-7 package/specs, Download DMP1018UCB9-7、Datasheet。