MOSFET N-CH 600V 20A 4DFN TK20V60W5,LVQ
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Description:
MOSFET N-CH 600V 20A 4DFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK20V60W5,LVQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35337,Price reference "real-time change" China/Hongkong。 TK20V60W5,LVQ package/specs, Download TK20V60W5,LVQ、Datasheet。