MOSFET N-CH 600V 38.8A TO220SIS TK39A60W,S4VX
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Description:
MOSFET N-CH 600V 38.8A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK39A60W,S4VX(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32088,Price reference "real-time change" China/Hongkong。 TK39A60W,S4VX package/specs, Download TK39A60W,S4VX、Datasheet。