PB-F POWER MOSFET TRANSISTOR TO2 TK49N65W,S1F
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Description:
PB-F POWER MOSFET TRANSISTOR TO2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK49N65W,S1F(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53637,Price reference "real-time change" China/Hongkong。 TK49N65W,S1F package/specs, Download TK49N65W,S1F、Datasheet。