MOSFET N-CH 650V 5.8A DPAK TK6P65W,RQ
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Description:
MOSFET N-CH 650V 5.8A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK6P65W,RQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79882,Price reference "real-time change" China/Hongkong。 TK6P65W,RQ package/specs, Download TK6P65W,RQ、Datasheet。