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MOSFET N-CH 650V 13.7A TO220SIS TK14A65W,S5X

TK14A65W,S5X image
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Brand:
Model:
TK14A65W,S5X
Description:
MOSFET N-CH 650V 13.7A TO220SIS
Stock:
82299
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Price:$0.54
The market price fluctuates. Please consult the customer service for the actual price
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    13.7A(Ta)
  • Drain source voltage (Vdss)
    650 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    35 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1300 pF @ 300 V
  • On resistance (maximum) for different Ids and Vgs
    250 mΩ @ 6.9A,10V
  • Power dissipation (maximum)
    40W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    3.5V @ 690µA
  • packing
    pipe
  • series
    DTMOSIV
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    TO-220SIS
  • Country of origin
    Japan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
  • PDFicoDataSheet
    TK14A65W,S5X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82299,Price reference "real-time change" China/Hongkong。 TK14A65W,S5X package/specs, Download TK14A65W,S5X、Datasheet。
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