TK14A65W,S5X parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK14A65W,S5X

Description:

MOSFET N-CH 650V 13.7A TO220SIS

Stock:

82299

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.54

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Parameters

Current at 25 ° C - continuous drain (Id)

13.7A(Ta)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

35 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1300 pF @ 300 V

On resistance (maximum) for different Ids and Vgs

250 mΩ @ 6.9A,10V

Power dissipation (maximum)

40W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

3.5V @ 690µA

packing

pipe

series

DTMOSIV

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

TO-220SIS

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

TK14A65W,S5X（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82299,Price reference "real-time change" China/Hongkong。 TK14A65W,S5X package/specs, Download TK14A65W,S5X、Datasheet。