MOSFET N-CH 100V 70A AEC-Q101 XPW4R10ANB,L1XHQ
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Description:
MOSFET N-CH 100V 70A AEC-Q101
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
XPW4R10ANB,L1XHQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63930,Price reference "real-time change" China/Hongkong。 XPW4R10ANB,L1XHQ package/specs, Download XPW4R10ANB,L1XHQ、Datasheet。