MOSFET N-CH 30V 80A 8TSON TPN1R603PL,L1Q
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Description:
MOSFET N-CH 30V 80A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN1R603PL,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory57992,Price reference "real-time change" China/Hongkong。 TPN1R603PL,L1Q package/specs, Download TPN1R603PL,L1Q、Datasheet。